Gas-source molecular-beam epitaxy and optical characterisation of highly-reflective InGaAsP/InP multilayer Bragg mirrors for 1.3 /spl mu/m vertical-cavity lasers

摘要

A highly reflective InGaAsP/InP Bragg mirror is reported for the first time at 1.3 /spl mu/m. The control of both layer compositions and thicknesses over 2 in wafers in the gas-source molecular-beam epitaxy equipment has enabled the realisation of such a mirror. An absolute reflectivity of 99.6% using a VW technique was recorded on a Pt/Au metallised 40-period mirror.