Low frequency noise analysis of LT-GaAs and LT-Al/sub 0.3/Ga/sub 0.7/As MISFET active layers

摘要

Noise spectroscopy has been used to assess the quality of the active layers of LT-GaAs and LT-Al/sub 0.3/Ga/sub 0.7/As MISFET devices using transmission line model structures. Noise spectra were studied as a function of insulator thickness. LT-Al/sub 0.3/Ga/sub 0.7/As samples and a 500 /spl Aring/ thick LT-GaAs sample exhibited 1/f noise. The noise parameter /spl alpha//sub latt/ was found to be of the order 10/sup -4/ for these samples. 2000 /spl Aring/ LT-GaAs samples exhibited 1/f/sup 3/2/ noise with 500 Hz corner frequency.