Room temperature continuous wave InGaAsN quantum well vertical-cavity lasers emitting at 1.3 /spl mu/m

摘要

Selectively oxidised vertical-cavity lasers emitting at 1294 nm using InGaAsN/GaAs quantum wells which exhibit continuous wave operation at and above room temperature are reported for the first time. The lasers employ two n-type Al/sub 0.94/Ga/sub 0.06/As/GaAs distributed Bragg reflectors each with a selectively oxidised current aperture adjacent to the optical cavity, and the top output mirror contains a tunnel junction to inject holes into the active region. Continuous wave single mode lasing is observed up to 55/spl deg/C. These lasers exhibit the longest wavelength reported to date for vertical-cavity surface lasers grown on GaAs substrates.