6 /spl mu/m vertical cavity surface emitting laser based on IV-VI semiconductor compounds

Schwarzl T.; Heiss W.

首页> 外文期刊>Electronics Letters >6 /spl mu/m vertical cavity surface emitting laser based on IV-VI semiconductor compounds

【24h】

6 /spl mu/m vertical cavity surface emitting laser based on IV-VI semiconductor compounds

机译：基于IV-VI半导体化合物的6 / spl mu / m垂直腔表面发射激光器

获取原文

获取原文并翻译 | 示例

获取外文期刊封面封底 >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

An optically-pumped lead salt-based vertical cavity surface emitting laser is presented. The laser structure grown by molecular-beam epitaxy consists of a Pb/sub 0.99/Eu/sub 0.01/Te/PbTe /spl lambda//2 microcavity with Pb/sub 0.99/Eu/sub 0.01/Te/Pb/sub 0.94/Eu/sub 0.06/Te Bragg mirrors. Stimulated emission was observed at 6073 nm below 25 K.

机译：提出了一种光泵浦的基于铅盐的垂直腔表面发射激光器。通过分子束外延生长的激光结构包括Pb / sub 0.99 / Eu / sub 0.01 / Te / PbTe / spl lambda // 2微腔以及Pb / sub 0.99 / Eu / sub 0.01 / Te / Pb / sub 0.94 / Eu / sub 0.06 / Te布拉格镜。在低于25 K的6073 nm处观察到受激发射。

著录项

来源
《Electronics Letters》 |2000年第4期|P.322-324|共3页
作者
Schwarzl T.; Heiss W.;
展开▼
作者单位

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词

相似文献

外文文献
中文文献
专利

1. 90/spl deg/C continuous-wave operation of 1.83-/spl mu/m vertical-cavity surface-emitting lasers [J] . Ortsiefer M., Shau R. IEEE Photonics Technology Letters . 2000,第11期

机译：1.83- / splμ/μm垂直腔面发射激光器的90 / spl deg / C连续波操作
2. Lead-salt vertical-cavity surface-emitting lasers operating at /spl lambda/=4.5-4.6 /spl mu/m with optical pumping [J] . Bewley W.W., Felix C.L. Electronics Letters . 2000,第6期

机译：铅盐垂直腔面发射激光器，在/ splλ/ = 4.5-4.6 / spl mu / m的条件下进行光泵浦
3. Continuous-wave operation up to 36/spl deg/C of 1.3-/spl mu/m GaInAsP-InP vertical-cavity surface-emitting lasers [J] . Uchiyama S., Yokouchi N. IEEE Photonics Technology Letters . 1997,第2期

机译：GaInAsP-InP垂直腔面发射激光器的连续波操作高达1.3 / splμm/ m的36 / spl deg / C
4. Low-threshold optically pumped IV-VI quantum well vertical-cavity surface-emitting laser operating at /spl lambda/=4.45 /spl mu/m [C] . Shi, Z., Wu, . 2001

机译：低阈值光泵浦IV-VI量子阱垂直腔面发射激光器，工作波长为/ spl lambda / = 4.45 / spl mu / m
5. Theoretical and experimental investigation of IV-VI mid-infrared multiple quantum wells vertical cavity surface emitting lasers. [D] . Khosravani, Shahriar. 2003

机译：IV-VI中红外多量子阱垂直腔表面发射激光器的理论和实验研究。
6. Room-temperature 2D semiconductor activated vertical-cavity surface-emitting lasers [O] . Jingzhi Shang, Chunxiao Cong, Zilong Wang, -1

机译：室温2D半导体激活的垂直腔面发射激光器
7. Dynamic modelling of electrooptically modulated vertical compound cavity surface emitting semiconductor lasers [O] . Albugami Naser, Avrutin Eugene 2017

机译：电光调制垂直复合腔面发射半导体激光器的动态建模

6 /spl mu/m vertical cavity surface emitting laser based on IV-VI semiconductor compounds

摘要

著录项

相似文献

相关主题

期刊订阅