Proposal and experimental demonstration of magnetic tunnel junction connected in parallel with tunnel diode

Uemura T.; Honma S.; Marukame T.; Yamamoto M.

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Proposal and experimental demonstration of magnetic tunnel junction connected in parallel with tunnel diode

机译：与隧道二极管并联的磁性隧道结的建议和实验演示

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摘要

A novel magnetic random access memory cell consisting of a magneto-tunnel junction (MTJ) and tunnel diode connected in parallel is described. The negative differential resistance characteristics of the tunnel diode were used to increase the tunnelling magneto-resistance (TMR) ratio of the MTJ. The fabricated circuit showed that the TMR ratio was enhanced from its original value of 11 to 103%.

机译：描述了一种新颖的磁性随机存取存储单元，该单元由并联的磁隧道结（MTJ）和隧道二极管组成。隧道二极管的负差分电阻特性用于增加MTJ的隧道磁阻（TMR）比。制成的电路显示，TMR比率从其原始值11提高到103％。

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来源
《Electronics Letters》 |2003年第21期|p.1549-1551|共3页
作者
Uemura T.; Honma S.; Marukame T.; Yamamoto M.;
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作者单位

Div. of Electron. & Inf. Eng., Hokkaido Univ., Sapporo, Japan;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词
tunnel diodes; tunnelling magnetoresistance; magnetoresistive devices; random-access storage; magnetic storage; magnetic tunnel junction; tunnel diode; parallel connection; negative differential resistance characteristics; NDR characteristics; magnetic RAM cell; ferromagnetic electrodes; tunnelling magneto-resistance effect; TMR effect;

机译：隧道二极管;隧道磁阻;磁阻器件;随机存取存储器;磁性存储器;磁性隧道结;隧道二极管;并联;负差分电阻特性;NDR特性;磁性RAM单元;铁磁电极;隧道磁阻效应;TMR效应;

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专利

1. Large Enhancement of Tunneling Magnetoresistance Ratio in Magnetic Tunnel Junction Connected in Series with Tunnel Diode [J] . Tetsuya UEMURA, Satoshi HONMA, Takao MARUKAME, Japanese Journal of Applied Physics. Part 1, Regular Papers & Short Notes . 2004,第1AaB期

机译：与隧道二极管串联的磁性隧道结中的隧道磁阻比大大提高
2. Novel Magnetic Random Access Memory Cell Consisting of Magnetic Tunnel Junction Connected in Parallel with Negative Differential Resistance Device [J] . Tetsuya UEMURA, Satoshi HONMA, Takao MARUKAME, Japanese Journal of Applied Physics. Part 2, Letters . 2004,第4BPt1期

机译：由与负微分电阻装置并联的磁隧道结组成的新型磁随机存取存储单元
3. Six-input lookup table circuit with 62% fewer transistors using nonvolatile logic-in-memory architecture with series/parallel-connected magnetic tunnel junctions [J] . D. Suzuki, M. Natsui, T. Endoh, Journal of Applied Physics . 2012,第7pta3期

机译：使用具有串联/并联磁性隧道结的非易失性存储器逻辑架构的六输入查找表电路，晶体管数量减少了62％
4. (07E318) Six-input lookup table circuit with 62 fewer transistors using nonvolatile logic-in-memory architecture with series/parallel-connected magnetic tunnel junctions [C] . D. Suzuki, M. Natsui, T. Endoh Annual Conference on Magnetism and Magnetic Materials . 2012

机译：（07E318）使用具有系列/并联磁隧道连接的非易失性逻辑内存架构的六输入查找表电路具有62％的晶体管
5. Experimental Studies of Oxide Magnetic Tunnel Junctions and Graphene. [D] . Liu, Xinfei. 2012

机译：氧化物磁性隧道结与石墨烯的实验研究。
6. Parallel fabrication of magnetic tunnel junction nanopillars by nanosphere lithography [O] . W. G. Wang, A. Pearse, M. Li, -1

机译：纳米球光刻技术并行制造磁性隧道结纳米柱
7. 600 GHz resonant mode in a parallel array of Josephson tunnel junctions connected by superconducting microstrip lines [O] . Kaplunenko V. K., Larsen Britt Hvolbæk, Mygind Jesper, 1994

机译：通过超导微带线连接的约瑟夫森隧道结的并联阵列中的600GHz谐振模式
8. Magnetic Tunnel Barriers and Associated Magnetic Tunnel Junctions with High Tunneling Magnetoresistance. [R] . Parkin, S. S. P. 2004

机译：具有高隧穿磁电阻的磁隧道势垒和相关磁隧道结。

Proposal and experimental demonstration of magnetic tunnel junction connected in parallel with tunnel diode

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