机译:全单片InAlGaAs / InP 1.3 / spl mu / m VCSEL的近室温连续波操作
Basic Res. Lab., Electron. & Telecommun. Res. Inst., Taejon, South Korea;
surface emitting lasers; semiconductor lasers; indium compounds; aluminium compounds; gallium arsenide; III-V semiconductors; MOCVD; semiconductor growth; etching; continuous-wave operation; all-monolithic VCSELs; InAlGaAs/InP; MOCVD; selective wet e;
机译:通过MOCVD生长的全单片InAlGaAs 1.55- / splμ/ m VCSEL的CW操作和阈值特性
机译:全外延基于InP的1.3 / spl mu / m VCSEL的连续波操作,差分量子效率为57%
机译:具有InP /气隙DBR的1.3和1.55- / splμ/ m VCSEL的高温连续波操作
机译:全单片InAlGaAs / InP 1.3 / spl mu / m VCSEL的近室温连续波操作
机译:高性能三层1.3- / spl mu / m Inas-Gaas量子点激光器,具有极低的连续波室温阈值电流 ud
机译:Inassb / Inp量子点激光器在室温下接近2(μm)的连续波操作