Demonstration of first 1050 V, 21.7 m/spl Omega/ cm/sup 2/ normally-off 4H-SiC junction field-effect transistor with implanted vertical channel

Zhao J.H.; Alexandrov P.; Fursin L.; Weiner M.

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Demonstration of first 1050 V, 21.7 m/spl Omega/ cm/sup 2/ normally-off 4H-SiC junction field-effect transistor with implanted vertical channel

机译：演示第一个1050 V，21.7 m / splΩ/ cm / sup 2 /常关型4H-SiC结场效应晶体管，具有注入的垂直沟道

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The first demonstration of a normally-off 4H-SiC double-gated, vertical junction field-effect transistor (VJFET) with implanted vertical channel without using epitaxial regrowth is reported. With an 11 /spl mu/m, 1/spl times/10/sup 16/ cm/sup -3/ doped drift layer, over 1000 V VJFETs in the normally-off mode have been fabricated with a specific on-resistance of 21.7 m/spl Omega/ cm/sup 2/.

机译：首次报道了常态关闭的4H-SiC双栅垂直结场效应晶体管（VJFET），该晶体管具有不使用外延再生长而注入的垂直沟道。在11 / spl mu / m，1 / spl次// 10 / sup 16 / cm / sup -3 /掺杂漂移层的情况下，已经制造了常关模式下超过1000 V的VJFET，其导通电阻为21.7 m / splΩ/ cm / sup 2 /。

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来源
《Electronics Letters》 |2003年第1期|p.151-152|共2页
作者
Zhao J.H.; Alexandrov P.; Fursin L.; Weiner M.;
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作者单位

Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词
silicon compounds; wide band gap semiconductors; junction gate field effect transistors; power field effect transistors; ion implantation; 4H-SiC vertical channel JFET; double-gated JFET; doped drift layer; vertical junction field-effect transistor;

机译：硅化合物;宽带隙半导体;结栅场效应晶体管;功率场效应晶体管;离子注入4H-SiC垂直沟道JFET;双栅JFET;掺杂漂移层垂直结场效应晶体管;
入库时间 2022-08-18 01:52:27

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专利

1. 1710-V 2.77-m/spl Omega/cm/sup 2/ 4H-SiC trenched and implanted vertical junction field-effect transistors [J] . Zhao J.H., Tone K., Alexandrov P., IEEE Electron Device Letters . 2003,第2期

机译：1710-V 2.77-m / splΩ/ cm / sup 2 / 4H-SiC沟槽和注入垂直结场效应晶体管
2. 1530V, 16.8 mΩ·cm~2, 4H-SiC normally-off vertical junction field-effect transistor [J] . L.G. Fursin, J.H. Zhao, M. Weiner Electronics Letters . 2004,第4期

机译：1530V，16.8mΩ·cm〜2，4H-SiC常关垂直结型场效应晶体管
3. 4H-SiC normally-off vertical junction field-effect transistor with high current density [J] . Tone K., Zhao J.H., Fursin L., IEEE Electron Device Letters . 2003,第7期

机译：具有高电流密度的4H-SiC常关垂直结型场效应晶体管
4. Demonstration of first 1050 V, 21.7 m/spl Omega/ cm/sup 2/ normally-off 4H-SiC junction field-effect transistor with implanted vertical channel [C] . Zhao, J.H., Alexandrov, . 2003

机译：演示第一个1050 V，21.7 m / splΩ/ cm / sup 2 /常关型4H-SiC结场效应晶体管，具有注入的垂直沟道
5. Design and fabrication of a high-voltage normally-off planar 4H-silicon carbide vertical junction field-effect transistor. [D] . Fursin, Leonid. 2005

机译：高压常关型平面4H碳化硅垂直结场效应晶体管的设计与制造。
6. CMOS-Integrated Low-Noise Junction Field-Effect Transistors for Bioelectronic Applications [O] . Daniel A. Fleischer, Siddharth Shekar, Shanshan Dai, -1

机译：用于生物电子应用的CMOS集成低噪声结型场效应晶体管
7. Effect of Gate Wet Reoxidation on Reliability and Channel Mobility of Metal-oxide-semiconductor Field-effect Transistors Fabricated on 4H-SiC (000 1) [O] . Takuma Suzuki, Junji Senzaki, Tetsuo Hatakeyama 2016

机译：栅极湿式再氧化对4H-siC（000 1）上制备的金属氧化物半导体场效应晶体管可靠性和沟道迁移率的影响

Demonstration of first 1050 V, 21.7 m/spl Omega/ cm/sup 2/ normally-off 4H-SiC junction field-effect transistor with implanted vertical channel

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