16x16 pixel silicon on sapphire CMOS digital pixel photosensor array

摘要

A report on a 16x16 pixel digital pixel photosensor array fabricated in silicon on sapphire CMOS technology is presented. The integrated current from integrated pin photodiodes is converted into a pulse density modulated address event stream at the pixel level. An arbitrated asynchronous interface is employed to output the digital data. The transparency of the sapphire substrate allows imaging from both the back and front side, opening possibilities for new and novel applications of CMOS photosensor arrays.