Accurate prediction of large-signal harmonic distortion in gallium nitride HEMTs

摘要

A nonlinear device modelling methodology capable of accurately predicting large-signal harmonic distortion in gallium nitride (GaN) HEMTs is presented. Harmonic balance simulation predicts the correct load target for maximum output power, with good agreement between measured and simulated load-pull data at 8 GHz. Fundamental output power at 8 GHz as well as second- and third-order harmonic distortion products at 16 and 24 GHz, respectively, are precisely predicted into 10 dB compression for a 2 W 150 mum GaN transistor