Design of UWB switched gain controlled LNA using 0.18 μm CMOS

摘要

A switched gain controlled low noise amplifier (LNA) for the 3.1-4.8 GHz ultra-wideband system is presented. The LNA is fabricated with the 0.18 μm 1P6M standard CMOS process. Measurement of the LNA was performed using an RF probe station. In gain mode, measured results show a noise figure of 4.68-4.97 dB, gain of 12.5-13.9 dB, and input/output return loss higher than 10/8.2 dB. The input IP3 (IIP3) at 4.1 GHz is 1 dBm, and consumes 14.6 mW of power. In bypass mode, measured results show a gain of -7.0 to - 8.7 dB, and input/output return loss higher than 10/6.3 dB. The input IP3 at 4.1 GHz is 9.2 dBm, and consumes 1 μW of power.