Fundamental oscillations at ~900 GHz with low bias voltages in RTDs with spike-doped structures

摘要

Fundamental oscillations are demonstrated at around 900 GHz with low bias voltages in resonant tunnelling diodes (RTDs) having spikedoped structures. Voltages at the current peak are 0.67 and 0.4 V for RTDs with spike-doping concentrations of 2 x 1018 and 1 x 1019 cm-3, respectively, and 0.94 V for the RTD without spike doping. The peak current densities are around 18 mA/;C;m2 and remain almost unchanged even after spike doping. The highest oscillation frequency observed in this study is 898 GHz in the 0.53 mm2 mesa area for the RTD with a spike-doping concentration of 2 x 1018 cm-3.