...
首页> 外文期刊>Electronicsletters >Fundamental oscillations at ~900 GHz with low bias voltages in RTDs with spike-doped structures
【24h】

Fundamental oscillations at ~900 GHz with low bias voltages in RTDs with spike-doped structures

机译:带有尖峰掺杂结构的RTD中低偏置电压在〜900 GHz时的基本振荡

获取原文
获取原文并翻译 | 示例
   

获取外文期刊封面封底 >>

       

摘要

Fundamental oscillations are demonstrated at around 900 GHz with low bias voltages in resonant tunnelling diodes (RTDs) having spike-doped structures. Voltages at the current peak are 0.67 and 0.4 V for RTDs with spike-doping concentrations of 2 × 10~(18) and 1 × 10~(19)cm~(-3), respectively, and 0.94 V for the RTD without spike doping. The peak current densities are around 18mA/μm~2 and remain almost unchanged even after spike doping. The highest oscillation frequency observed in this study is 898 GHz in the 0.53 μm~2 mesa area for the RTD with a spike-doping concentration of 2 × 10~(18)cm~(-3).
机译:在具有尖峰掺杂结构的共振隧穿二极管(RTD)中,在低偏置电压下以900 GHz左右的频率显示了基本振荡。对于RTD,其尖峰掺杂浓度分别为2×10〜(18)和1×10〜(19)cm〜(-3),其电流峰值电压分别为0.67和0.4 V;对于无尖峰的RTD,其峰值电压为0.94 V掺杂。峰值电流密度约为18mA /μm〜2,即使在尖峰掺杂后仍保持几乎不变。在此研究中,对于RTD,在0.53μm〜2台面区域中观察到的最高振荡频率为898 GHz,尖峰掺杂浓度为2×10〜(18)cm〜(-3)。

著录项

  • 来源
    《Electronicsletters》 |2010年第14期|P.1006-1007|共2页
  • 作者单位

    Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1-S9-3 Ookayama, Meguro-ku, Tokyo 152-8552, Japan;

    rnInterdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1-S9-3 Ookayama, Meguro-ku, Tokyo 152-8552, Japan;

    rnInterdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1-S9-3 Ookayama, Meguro-ku, Tokyo 152-8552, Japan;

    rnInterdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1-S9-3 Ookayama, Meguro-ku, Tokyo 152-8552, Japan;

    rnNTT Photonics Laboratories, NTT Corporation, 3-1 Morisonosato-Wakamiya, Atsugi, Kanagawa 243- 0198, Japan;

    rnNTT Photonics Laboratories, NTT Corporation, 3-1 Morisonosato-Wakamiya, Atsugi, Kanagawa 243- 0198, Japan;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号