Extraction of SOS MOSFET RF equivalent circuit elements by LCR meter measurements

摘要

Two methods for the extraction of the small-signal equivalent circuit of high frequency silicon on sapphire (SOS) MOSFETs are compared. One technique employs microwave vector network analyser measurements in the 0.2-24 GHz range, while the other uses a low frequency LCR meter at 100 kHz to determine the circuit element values. Results presented show excellent agreement between the two methods. It is concluded that the low frequency method can be successfully used to extract high frequency circuit-model elements and reasons for this are offered.