Phase-change memory device fabricated using solid-state alloying

摘要

A novel fabrication method for phase-change memory devices using solid-state alloying is presented, which enables programming current reduction. Preformed pores, exposing germanium layers, were filled with antimony-tellurium layers, and germanium-antimony-tellurium (GST) phase-change layers were prepared by the solid-state alloying of germanium and antimony-tellurium. Programming currents for reset and set operations were drastically reduced compared to those of a control device. The decreased programming currents are attributed to a small-sized programmable volume and the existence of GST thermal barriers.