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Low-power sub-1-V compact bandgap reference for passive RFID tags

机译:用于无源RFID标签的低功耗1V以下紧凑型带隙基准

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摘要

A sub-1-V bandgap used for passive radio-frequency identification (RFID) tags is presented. The bandgap circuit needs to work under a low supply voltage in the power starving application environment. In the literature, there are lots of low-voltage structures with large current to realise high performance. However, they are not suitable for low-cost RFID tags, so a low-power sub-1-V bandgap is realised. First, the basic structure of the proposed compact low-voltage supply low-power bandgap reference is shown. Secondly, a circuit analysis is presented and some detail considerations in the design processing are given. Finally, the chip is fabricated in a 0.13 μm mixed signal CMOS process. This low-power sub-1-V bandgap can work well at 0.85 V and at only needs 2.5 μA current at the 1.2 V supply voltage.
机译:提出了一种用于无源射频识别(RFID)标签的低于1 V的带隙。在电源短缺的应用环境中,带隙电路需要在低电源电压下工作。在文献中,存在许多具有大电流的低压结构以实现高性能。但是,它们不适用于低成本RFID标签,因此实现了低功率1V以下的带隙。首先,显示了所建议的紧凑型低压电源低功率带隙基准的基本结构。其次,给出了电路分析,并给出了设计过程中的一些详细考虑。最后,以0.13μm混合信号CMOS工艺制造芯片。低功耗1V以下的带隙能在0.85V的电压下很好地工作,在1.2V的电源电压下仅需要2.5μA的电流。

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