67–80 GHz double-balanced Gilbert-cell mixer in 0.1 μm GaAs pHEMT technology

摘要

A 67–80 GHz double-balanced Gilbert-cell mixer fabricated in 0.1 μm gallium arsenide pseudomorphic high-electron-mobility transistor technology is presented. Two Marchand baluns were placed in RF and local oscillator (LO) input ports to convert single-ended signals to differential signals for wideband use. A differential amplifier between the switch and output stages was used to enhance the conversion gain (CG). The mixer demonstrated an average CG of 14.1 ± 2.1 dB at an LO power of 0 dBm from 67 to 80 GHz. The measured intermediate frequency 3 dB bandwidth was 3 GHz and the input 1 dB compression point was −4.8 dBm.