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首页> 外文期刊>Electronics Letters >Integrate-and-fire spiking neuron circuit exhibiting spike-triggered adaptation through input current modulation with back gate effect
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Integrate-and-fire spiking neuron circuit exhibiting spike-triggered adaptation through input current modulation with back gate effect

机译:集成和发射尖峰神经元电路,通过具有背栅效应的输入电流调制显示出尖峰触发的自适应

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摘要

The authors present a spike-triggered adaptive neuron circuit with input current modulation. Unlike adaptive neuron circuits where adaptation is realised by leakage modulation, the circuit presented in this Letter modulates the input current to membrane capacitor. Therefore, it is possible to reduce extra power consumption originating from increased leakage. Threshold voltage modulation of silicon on insulator (SOI) MOSFET by back gate effect is used to change the amount of injected current for the same input voltage. Through this method, the circuit in this work consumed 25.9% less power than the one modulating leakage.
机译:作者提出了一种带有输入电流调制的尖峰触发自适应神经元电路。与通过泄漏调制来实现自适应的自适应神经元电路不同,本信函中介绍的电路可调制薄膜电容器的输入电流。因此,可以减少源于泄漏增加的额外功耗。通过背栅效应对绝缘体上硅(SOI)MOSFET的阈值电压调制用于更改相同输入电压下的注入电流量。通过这种方法,这项工作中的电路比一个调制泄漏电路消耗的功率少25.9%。

著录项

  • 来源
    《Electronics Letters》 |2018年第17期|1022-1024|共3页
  • 作者单位

    Department of Electrical and Computer Engineering, Seoul National University, Republic of Korea;

    Department of Electrical and Computer Engineering, Seoul National University, Republic of Korea;

    Department of Electrical and Computer Engineering, Seoul National University, Republic of Korea;

    Department of Electrical and Computer Engineering, Seoul National University, Republic of Korea;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    MOSFET; neural chips;

    机译:MOSFET;神经芯片;

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