Study of microdefects in near-surface and interior of III-V compound wafers by dark-field transmission microscopy

摘要

The application of dark field transmission microscopy is reported for observing microdefects in III-V compound wafers. Using near infra-red imaging with a video camera, high contrast results are obtained of micro-precipitates of 1 mu m and smaller in the subsurface and interior of wafers of indium-doped GaAs and an epitaxial layer of GaAs on GaAs.