Intrinsic modulation bandwidth in ultra-high-speed 1.3 and 1.55 mu m GaInAsP DFB lasers

Uomi K.; Nakano H.

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Intrinsic modulation bandwidth in ultra-high-speed 1.3 and 1.55 mu m GaInAsP DFB lasers

机译：GaInAsP DFB超高速1.3和1.55μm激光的本征调制带宽

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摘要

By using an ultra-low capacitance structure, the wavelength dependence, 1.3 or 1.55 mu m, of the intrinsic modulation bandwidth relating to the relaxation oscillation frequency and the nonlinear damping in GaInAsP DFB lasers is investigated.

机译：通过使用超低电容结构，研究了与GaInAsP DFB激光器的弛豫振荡频率和非线性阻尼有关的固有调制带宽的波长依赖性（1.3或1.55μm）。

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来源
《Electronics Letters 》 |1989年第25期| P.1689-1690| 共2页
作者
Uomi K.; Nakano H.;
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作者单位

Central Res. Lab., Hitachi Ltd., Tokyo, Japan;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术 ;
关键词
III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; optical communication equipment; optical modulation; semiconductor junction lasers; 1.3 micron; 1.55 micron; DFB lasers; GaInAsP; intrinsic modulation bandwidth; nonlinear damping; relaxation oscillation frequency; ultra high speed lasers; ultra-low capacitance structure; wavelength dependence;

机译：III-V型半导体;分布式反馈激光器;砷化镓;镓化合物;光通信设备;光调制;半导体结激光器;1.3微米;1.55微米;DFB激光器;GaInAsP;本征调制带宽;非线性阻尼;松弛振荡频率;超高高速激光器;超低电容结构;波长依赖性;

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专利

1. Threshold currents of 1.3-/spl mu/m bulk, 1.55-/spl mu/m bulk, and 1.55-/spl mu/m MQW DFB P-substrate partially inverted buried heterostructure laser diodes [J] . Kakimoto S., Watanabe H. IEEE Journal of Quantum Electronics . 1998 ,第3期

机译：阈值电流为1.3- / splμ/ m体积，1.55- / splμ/ m体积和1.55- / splμ/ m3 MQW DFB P衬底部分倒置的埋入式异质结构激光二极管
2. Effects of Zn doping on modulation bandwidth of 1.55 mu m InGaAs/InGaAsP multiquantum well DFB lasers [J] . Lealman I.F., Harlow M.J. Electronics Letters . 1993 ,第13期

机译：锌掺杂对1.55μmInGaAs / InGaAsP多量子阱DFB激光器调制带宽的影响
3. 30 GHz bandwidth, 1.55 /spl mu/m MQW-DFB laser diode based on a new modulation scheme [J] . Goutain E., Renaud J.C. Electronics Letters . 1996 ,第10期

机译：30 GHz带宽，基于新的调制方案的1.55 / spl mu / m MQW-DFB激光二极管
4. High-frequency properties of 1.3 /spl mu/m and 1.55 /spl mu/m electro-absorption modulators integrated with DFB lasers based on identical MQW-double stack active layer [C] . Stegmueller, B., Hanke, . 2002

机译：与基于相同MQW双叠层有源层的DFB激光器集成在一起的1.3 / spl mu / m和1.55 / spl mu / m的电吸收调制器的高频特性
5. Optical Feedback Effects Within 1.55 μm InP-Based DFB Laser Integrated Mach-Zehnder Modulators for up to 100 GBd Data Transmission =Optische Rückkopplungseffekte in 1.55 μm InP-basierten DFB Laser integrierten Mach-Zehnder Modulatoren für bis zu 100 GBd D [D] . Lange, Sophie Gloria. 2019

机译：基于1.55μm的INP的DFB激光集成Mach-Zehnder调制器的光学反馈效果高达100 GBD数据传输=1.55μm基于INP的DFB激光器集成Mach-Zehnder调制器中的光学反馈效果最多100 GBD D.
6. Improved ground-state modulation characteristics in 1.3 μm InAs/GaAs quantum dot lasers by rapid thermal annealing [O] . Hanxue Zhao, Soon Fatt Yoon, Chun Yong Ngo, 2011

机译：通过快速热退火改善1.3μmInAs / GaAs量子点激光器中的基态调制特性
7. GSMBE growth of GaInAsP/InP 1.3 mu m-TM-lasers for monolithic integration with optical waveguide isolator [O] . LELARGE F, DAGENS B, CUISIN C, 2005

机译：用于与光波导隔离器单片集成的GaInasp / Inp1.3μmm-Tm激光器的GsmBE生长

Intrinsic modulation bandwidth in ultra-high-speed 1.3 and 1.55 mu m GaInAsP DFB lasers

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