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Fabrication of a Zn Ferrite Thick Film Planar Power Inductor for DC-DC Converter LSI Package

机译:用于DC-DC转换器LSI封装的Zn铁氧体厚膜平面功率电感器的制造

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In order to realize a point of load (POL) DC-DC converter for LSIs, a Zn ferrite thick film power inductor embedded in an LSI package has been fabricated and evaluated in this study. A 10-μm-thick spin-sprayed Zn ferrite film with a high saturation magnetization of 0.57 T was introduced to the magnetic core for a planar power inductor consisting of a 20-μm-thick, 650-μm-square, two-turn inner copper spiral coil sandwiched between top and bottom magnetic cores. The Zn ferrite film had a natural resonant frequency of 500 MHz and a static relative permeability of 80. The planar power inductor with a footprint of 850 × 850 μm exhibited a 10-nH inductance and a quality factor of 20 at 100 MHz. The degradation of inductance owing to the superimposed DC current of 2 A was 17%. The planar power inductor will be applied to a low-voltage converter with a switching operation at hundreds of megahertz in the future.
机译:为了实现用于LSI的负载点(POL)DC-DC转换器,已制造并评估了嵌入LSI封装的Zn铁氧体厚膜功率电感器。将具有0.57 T的高饱和磁化强度的10μm厚度的自旋喷涂Zn铁氧体膜引入用于平面功率电感器的磁芯,该平面功率电感器由20μm厚度,650μm正方形,两匝内夹在顶部和底部磁芯之间的铜螺旋线圈。锌铁氧体薄膜具有500 MHz的固有谐振频率和80的静态相对磁导率。占板面积850×850μm的平面功率电感器在100 MHz时具有10nH的电感和20的品质因数。由于叠加了2 A的直流电流,电感的劣化为17%。未来,平面功率电感器将应用于开关频率为数百兆赫兹的低压转换器。

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