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Putting the chill on Hot Components

机译:放热组件

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摘要

The Semiconductor Industry Association (SIA) road-map indicates by the year 2001 isolated lines and gates for microprocessors will be in the 0.12 micron range and have operating logic voltages between 1.2-1.5 V. When these projected numbers are overlaid on the expected device operational frequency of over 1 GHz, the result is a very high power density electronic device. If the SIA roadmap is forward-translated and projected onto a typical high-end microprocessor device, one could expect a total device power of 125W with a device heat flux of approximately 20-24 W/cm~2 around the year 2000.
机译:半导体工业协会(SIA)路线图表明,到2001年,微处理器的隔离线和门将在0.12微米范围内,并且操作逻辑电压在1.2-1.5 V之间。频率超过1 GHz,结果是功率密度非常高的电子设备。如果将SIA路线图进行前向翻译并投影到典型的高端微处理器设备上,则可以预期2000年前后设备总功率为125W,设备热通量约为20-24 W / cm〜2。

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