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Spansion moves NOR flash density into NAND territory

机译:Spansion将NOR闪存密度转移到NAND领域

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摘要

Sunnyvale, Calif. — If nonvolatile-memory maker Spansion LLC has its way, current thinking about the roles of NOR and NAND flash could be upended, triggering a drastic shift in market share in its favor and even changing the way audio, video and image data are compressed for storage in mobile devices. The company, jointly owned by Advanced Micro Devices Inc. and Fujitsu Ltd., details its plans in a road map to be released today. It carries Spansion's NOR flash devices from the 110-nanometer, 512-Mbit devices already in production through the 45-nm process node and to densities of 8 Gbits per die, nearly overtaking the NAND flash road maps of the company's competitors. "We are currently producing 512-Mbit NOR devices," Spansion president and CEO Bertrand Cambou said. "We already have material in manufacturing for a 1-gigabit NOR device, and our near-term road map will carry us to 8 gigabits."
机译:如果非易失性存储器制造商Spansion LLC成功,目前对NOR和NAND闪存的作用的看法可能会被颠覆,从而引发市场份额的急剧变化,甚至会改变音频,视频和图像的方式数据被压缩以存储在移动设备中。该公司由Advanced Micro Devices Inc.和Fujitsu Ltd.共同拥有,在今天发布的路线图中详细说明了其计划。它使用Spansion的NOR闪存设备从已经生产的110纳米,512 Mbit设备通过45纳米工艺节点传输到每个芯片8 Gbit的密度,几乎超过了该公司竞争对手的NAND闪存路线图。 Spansion总裁兼首席执行官Bertrand Cambou说:“我们目前正在生产512 Mb NOR设备。” “我们已经拥有制造1 Gb NOR器件的材料,我们的近期路线图将使我们达到8 Gb。”

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