Intel-Micron venture pushes NAND process envelope to 25 nm

摘要

Intel Corp. and Micron Technology Inc. retook the process lead in NAND flash with the recent announcement here of an 8-Gbyte multilevel-cell (MLC) device fabricated in a 25-nanometer technology.rnThe memory, measuring 167 mm~2, puts Intel-Micron joint venture IM Flash Technologies LLC ahead of the SanDisk-Toshiba partnership and Samsung Electronics, which respectively have announced 32-nm and 30-nm NAND flash products. Hynix Semi-rnconductor Inc. has a 26-nm device in the pipeline.