HIGH LEVEL p-TYPE DOPING IN MBE GROWTH OF GaAs AND Al_xGa_(1-x)As

摘要

In this note we present the results of doping studies of GaAs and Al_xGa_(1-x)As epitaxial layers with beryllium. The samples were doped in a broad range of concentrations from 10~(15)cm~(-3)to 5·10~(19) cm~(-3) for GaAs grown at the standard conditions. Further incorporation of Be atoms resulted in disturbed growth, however when the growth condition were readjusted the layers with metal like conductivity and Be atom concentration as high as (4 / 6)·10~(20) cm~(-3) were produced. The electrical quality of GaAs:Be and Al_xGa_(1-x)As:Be alloys were characterzsed in order to verify their applicability in laser heterostructures.