机译:具有低于10nm Ha基铁电电容器的低于60mV /十年的负电容FinFET
Department of Electrical and Computer Engineering, University of Seoul, Seoul, South Korea;
Department of Electrical and Computer Engineering, University of Seoul, Seoul, South Korea;
Department of Applied Physics, Korea University, Segong, South Korea;
Department of Applied Physics, Korea University, Segong, South Korea;
Department of Electrical and Computer Engineering, University of Seoul, Seoul, South Korea;
FinFETs; Capacitors; Capacitance; Switches; Ferroelectric materials; Logic gates;
机译:外部连接到外延铁电电容器的短通道FinFET中的负电容
机译:具无迟滞Sub-60-mV /十年切换功能的负电容场效应晶体管
机译:60mV /十年以下陡峭开关器件拓扑绝缘体中负量子电容的实验证据
机译:铁电材料中的负电容及其在小于60 mV /十年亚阈值摆幅的晶体管中的潜在用途
机译:铁电负电容的设计与表征
机译:FinFET和带铁电电容器的全耗尽绝缘体上硅(FDSOI)MOSFET的磁滞窗口研究
机译:使用抗铁电/铁电堆负电容FINFET的开启状态性能的S曲线工程