Picosecond photocarrier transport in hydrogenated amorphous-silicon p-i-n diodes

摘要

Optically detected, picosecond-domain photocarrier transport measurements for hydrogenated amorphous silicon (a-Si:H) p-i-n diodes with uniform and nonuniform electric fields are reported. The transient electroabsorption bleaching mechanism for optical detection is described, and the interpretation of these transients is extended to the case of nonuniform electric fields. A technique for using surface-absorbed light and optical detection for measurement of nonuniform electric fields is presented.