10- mu m GaAs/AlGaAs multiquantum well scanned array infrared imaging camera

摘要

A long-wavelength infrared imaging camera that uses a GaAs/Al/sub x/Ga/sub 1-x/As quantum-well infrared photodetector (QWIP) array is demonstrated. Excellent noise equivalent temperature difference sensitivity (NE Delta T>0.1 degrees C) has been achieved. The long-wavelength cutoff for the QWIP used in this camera is at lambda /sub c/=10.7 mu m with the peak response being at lambda /sub p/=9.8 mu m. A peak detectivity of 2*10/sup 10/ cm square root Hz/W has been achieved at 77 K as well as an excellent pixel-to-pixel uniformity of 2%. Since GaAs has a more mature growth and processing technology as well as higher uniformity than HgCdTe, it shows great promise for the fabrication of large two-dimensional arrays.