Determination of the switching condition in the quantum-well double-heterostructure optoelectronic switch (DOES)

摘要

The switching mechanism in the GaAs/AlGaAs double-heterostructure optoelectronic switching device (DOES) is investigated in the context of the single-quantum-well graded index laser structure. A new charge conservation approach is introduced to explain the switching mechanism responsible for the thyristor-like behavior. Simple results are obtained for design purposes for currents, voltages, charges, and electric fields at the switching conditions. Switching energies are found to be on the order of 0.1-0.5 fJ/ mu m/sup 2/.