Comments, with reply, on 'A scanning electron- or light-beam-induced current method for determination of grain boundary recombination velocity in polycrystalline semiconductors' by C.A. Dimitriadis

摘要

An asymptotic analysis of beam-induced-current profiles of grain boundaries in polycrystalline solar cells presented in the above-titled paper by C.A. Dimitriadis (ibid., vol.32, p.1761-5, Sept. 1985) is corrected and extended to the case of arbitrary interface recombination velocity. Dimitriadis replies that the original analysis is correct within the first-order approximation.