Pulsed high-power operation of p/sup +/pnn/sup +/-avalanche diodes near avalanche resonance for mm-wave oscillators

摘要

Results of a systematic investigation by computer simulation of symmetric GaAs p/sup +/pnn/sup +/-avalanche diodes for pulsed high-power operation near avalanche resonance at millimeter-wave frequencies are presented. Different operation modes have been found at dc-current densities as high as necessary for avalanche resonance and are classified with regard to dynamic dc stability. A pin-like Misawa mode of operation with compensated space-charge of mobile and fixed charge carriers (space-charge compensated pin mode) and a quasi-Impatt mode with separated generation and drift regions are calculated to yield high RF power at high impedance level. Maximum RF-output power up to 100 W can be expected from the space-charge compensated pin mode at 1 /spl Omega/ matching impedance for 60 GHz with an efficiency of 14%.