...
首页> 外文期刊>Electron Devices, IEEE Transactions on >Integration of Solar Cells on Top of CMOS Chips—Part II: CIGS Solar Cells
【24h】

Integration of Solar Cells on Top of CMOS Chips—Part II: CIGS Solar Cells

机译:在CMOS芯片上集成太阳能电池-第二部分:CIGS太阳能电池

获取原文
获取原文并翻译 | 示例
           

摘要

We present the monolithic integration of deep-submicrometer complementary metal–oxide–semiconductor (CMOS) microchips with copper indium gallium (di)selenide (CIGS) solar cells. Solar cells are manufactured directly on unpackaged CMOS chips. The microchips maintain comparable electronic performance, and the solar cells on top show an efficiency of 8.4 $pm$ 0.8% and a yield of 84%, both values being close to the glass reference. The main integration issues, i.e., adhesion, surface topography, metal ion contamination, process temperature, and mechanical stress, can be resolved while maintaining standard photovoltaic processing. A tight process window is found for the manufacturing of CIGS solar cells on the CMOS side of the microchip. More process margin exists for backside integration.
机译:我们介绍了深亚微米互补金属-氧化物-半导体(CMOS)微芯片与铜铟镓硒(CIGS)太阳能电池的单片集成。太阳能电池直接在未包装的CMOS芯片上制造。微芯片保持可比的电子性能,最上面的太阳能电池的效率为8.4pmpm 0.8%,产率为84%,两个值都接近玻璃参考值。在保持标准光伏工艺的同时,可以解决主要的集成问题,即粘附性,表面形貌,金属离子污染,工艺温度和机械应力。在微芯片的CMOS侧发现了用于CIGS太阳能电池制造的紧密工艺窗口。存在用于背面集成的更多工艺裕量。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号