Junction Field Effect on the Retention Time for One-Transistor Floating-Body RAM

摘要

One-transistor floating-body random access memory retention time distribution is investigated on silicon-on-insulator UTBOX devices. It is shown that the average retention time can be improved by two to three orders of magnitude by reducing the body–junction electric field. However, the retention time distribution, which is mainly caused by the generation–recombination center density variation, remains similar.