Junction-Temperature Determination in InGaN Light-Emitting Diodes Using Reverse Current Method

摘要

A method is presented in this study to determine the junction temperature $(T_{j})$ of LED in terms of the relationship between the diode reverse current $(I_{R})$ and $T_{j}$ . A theoretical model for the dependence of $I_{R}$ on $T_{j}$ is derived on the basis of the Shockley equation and is validated by our experimental results. The method is compared with the conventional forward voltage method, and its advantages have been identified.