机译:基于宏旋转的综合磁隧道结自旋转矩振荡器模型-第二部分:Verilog-A模型实现
Dept. of Integrated Devices & Circuits, KTH R. Inst. of Technol., Kista, Sweden;
approximation theory; hardware description languages; magnetic circuits; magnetic devices; magnetic noise; magnetic tunnelling; noise generators; oscillators; phase noise; CMOS RF circuit; DC operating point; MTJ; STO; Verilog-A model implementation; applied DC current; approximation model; circuit-level design; equivalent device characteristics; macrospin-based magnetic tunnel junction spin torque oscillator model; magnetic field; oscillation amplitude; phase noise generation; reliability model; system-level design; time domain signal; Analytical models; Hardware design languages; Integrated circuit modeling; Magnetic tunneling; Mathematical model; Noise; Semiconductor device modeling; Analytical model; macrospin; magnetic tunnel junction (MTJ); spin torque oscillator (STO); spin torque oscillator (STO).;
机译:基于宏旋转的综合磁隧道结自旋转矩振荡器模型-第一部分:MTJ STO的分析模型
机译:旋转扭矩传递磁隧道结的新型Verilog-A模型
机译:包含磁隧道结垂直转矩的自旋转矩振荡器的新电路模型
机译:复合磁隧道结,用于快速记忆装置和高效的旋转扭矩纳米振荡器
机译:自旋轨道转矩驱动的三端电磁隧道结中的磁开关
机译:使用磁隧道结自旋扭矩纳米振荡器的高速单边带发生器
机译:基于综合和宏观的磁隧道结自旋扭矩 振荡器模型 - 第二部分:Verilog-a模型实现