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机译:具有鲁棒性低功耗操作的相关材料增强型SRAM
Pennsylvania State University, University Park, PA, USA;
Pennsylvania State University, University Park, PA, USA;
Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN, USA;
Pennsylvania State University, University Park, PA, USA;
Pennsylvania State University, University Park, PA, USA;
Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN, USA;
Intel Corporation, Hillsboro, OR, USA;
Pennsylvania State University, University Park, PA, USA;
Pennsylvania State University, University Park, PA, USA;
Transistors; Resistance; Stability; SRAM cells; Leakage currents;
机译:混合GC-eDRAM / SRAM位单元,可实现低功耗运行
机译:耐用的非对称6T-SRAM单元,可在纳米CMOS技术中实现低功耗运行
机译:耐用的非对称6T-SRAM单元,可在纳米CMOS技术中实现低功耗运行
机译:具有完全半选择免操作的低泄漏写增强型坚固11T SRAM单元
机译:在低功耗数字CMOS中具有稳健运行的高性能模拟电路的挑战和解决方案。
机译:使用基于SRAM的FPGA进行功率感知的高性能无线传感器网络
机译:7具有增强读操作功能的稳健10T sRam单元