机译:局部掺杂对垂直结构隧道FET逆变器开关特性的影响
Department of Electrical Engineering and Computer Science, Inter-University Semiconductor Research Center, Seoul National University, Seoul, South Korea;
Department of Electrical Engineering and Computer Science, Inter-University Semiconductor Research Center, Seoul National University, Seoul, South Korea;
Department of Electrical Engineering and Computer Science, Inter-University Semiconductor Research Center, Seoul National University, Seoul, South Korea;
Department of Electrical Engineering and Computer Science, Inter-University Semiconductor Research Center, Seoul National University, Seoul, South Korea;
Department of Electrical Engineering and Computer Science, Inter-University Semiconductor Research Center, Seoul National University, Seoul, South Korea;
Department of Electrical Engineering and Computer Science, Inter-University Semiconductor Research Center, Seoul National University, Seoul, South Korea;
Department of Electrical Engineering and Computer Science, Inter-University Semiconductor Research Center, Seoul National University, Seoul, South Korea;
Department of Electrical Engineering and Computer Science, Inter-University Semiconductor Research Center, Seoul National University, Seoul, South Korea;
Department of Electrical Engineering and Computer Science, Inter-University Semiconductor Research Center, Seoul National University, Seoul, South Korea;
TFETs; Silicon; Doping; Tunneling; Inverters; Logic gates; Delays;
机译:光学效应对垂直高斯掺杂轮廓的纳米SOI MOSFET特性的影响
机译:垂直高斯掺杂分布对GaAs纳米FinFET特性的光学影响
机译:异质结构PNPN隧道FET:反掺杂的缩放效应分析
机译:倒置T通道FET(ITFET) - 垂直水平,瘦身,多栅极,多向装置的制造和特性,ITFET SRAM位单元操作。 45nm及超越CMOS的新技术
机译:分子掺杂的平面隧道结:将分子结构与结电特性相关联。
机译:具有Taox的RRAM的垂直3D结构的侧壁电极氧化自定位切换区域
机译:具有掺杂工程的L形隧道FET的陡峭切换特性