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机译:凹槽蚀刻对具有Al2O3 / AlN栅堆叠的GaN基MIS-HEMT的温度相关特性的影响
School of Advanced Materials and Nanotechnology, Xidian University, Xi’an, China;
School of Advanced Materials and Nanotechnology, Xidian University, Xi’an, China;
School of Advanced Materials and Nanotechnology, Xidian University, Xi’an, China;
School of Advanced Materials and Nanotechnology, Xidian University, Xi’an, China;
School of Advanced Materials and Nanotechnology, Xidian University, Xi’an, China;
School of Advanced Materials and Nanotechnology, Xidian University, Xi’an, China;
School of Advanced Materials and Nanotechnology, Xidian University, Xi’an, China;
School of Advanced Materials and Nanotechnology, Xidian University, Xi’an, China;
Logic gates; Etching; Aluminum gallium nitride; Wide band gap semiconductors; Temperature measurement; HEMTs; Aluminum nitride;
机译:DC和RF特性的增强型Al2O3 / AlGaN / GaN MIS-HEMT由浅凹槽制成的氟处理和深凹陷
机译:含HfO2和Al2O3栅绝缘体的Si基AlGaN / GaN嵌入式MIS-HEMT的特性比较研究
机译:GAN堆栈小信号模型及基于GAN的MIS-HEMTS界面陷阱的测定研究
机译:栅槽式Al2O3 / AlGaN / GaN MOS-HEMT中Al2O3层和刻蚀深度对2DEG片密度的影响机理。
机译:面向增强模式特性的具有双AlGaN势垒设计的嵌入式栅AlGaN / GaN MIS-HEMT研究
机译:基体特性对高体积分数Al2O3 / Al-AlN复合材料断裂韧性的影响