Macromodel for AC and Transient Simulations of Organic Thin-Film Transistor Circuits Including Nonquasistatic Effects

摘要

A charge-based macromodel for small-signal ac and transient analyses of organic thin-film transistors (TFTs) is presented. Due to the comparatively small charge-carrier mobility in organic TFTs, the dynamic behavior of the gate-field-induced carrier channel is greatly affected by the frequency of the applied gate–source and drain–source voltages. The model presented here is, therefore, based on the transmission-line model and shown to reproduce the results of frequency-dependent admittance measurements and numerical simulations of the transient switching behavior of organic TFTs fabricated in the staggered architecture with good accuracy. The model has been implemented in the hardware description language Verilog-A.