Temperature Dependence of Analog Performance, Linearity, and Harmonic Distortion for a Ge-Source Tunnel FET

摘要

In this article, we report an investigation of the effects of variation in temperature in the range of 300-450 K on the analog performance and harmonic distortion (HD) characteristics of a Ge-source tunnel FET (TFET) using a numerical device simulator. Variation in the analog performance parameters, such as transconductance, intrinsic gain, and output resistance, is found to be small for such a large variation in temperature. HD parameters are also found to be almost insensitive to temperature variation over a good range.