Ultrascaled Resonant Tunneling Diodes Based on BN Decorated Zigzag Graphene Nanoribbon Lateral Heterostructures

摘要

Ultrascaled 2-D resonant tunneling diodes (RTDs), with dimensions of exhibiting negative differential resistance (NDR) are proposed. Zigzag graphene nanoribbons (ZGNRs) are used as the base material. Boron nitride (BN) decoration is utilized to open a gap in a ZGNR energy band structure. Within the framework of nonequilibrium Green's function (NEGF) and tight-binding (TB) approximated Hamiltonian, the device operation of proposed RTDs is investigated. The effect of well and barrier length modulation on the device figures is studied. Results show that extremely small changes, in the order of a few angstroms, in the well or the barrier dimensions translate to a significant change in device figures.