机译:具有NBN设计的HGCDTE长波长红外光电探测器的增强性能
Chinese Acad Sci Shanghai Inst Tech Phys State Key Lab Infrared Phys Shanghai 200083 Peoples R China;
Chinese Acad Sci Shanghai Inst Tech Phys State Key Lab Infrared Phys Shanghai 200083 Peoples R China;
Chinese Acad Sci Shanghai Inst Tech Phys State Key Lab Infrared Phys Shanghai 200083 Peoples R China;
Chinese Acad Sci Shanghai Inst Tech Phys State Key Lab Infrared Phys Shanghai 200083 Peoples R China;
Chinese Acad Sci Shanghai Inst Tech Phys State Key Lab Infrared Phys Shanghai 200083 Peoples R China;
Chinese Acad Sci Shanghai Inst Tech Phys Key Lab Infrared Imaging Mat & Detectors Shanghai 200083 Peoples R China;
Chinese Acad Sci Shanghai Inst Tech Phys Key Lab Infrared Imaging Mat & Detectors Shanghai 200083 Peoples R China;
Mil Univ Technol Inst Appl Phys PL-00908 Warsaw Poland;
Mil Univ Technol Inst Appl Phys PL-00908 Warsaw Poland;
Chinese Acad Sci Shanghai Inst Tech Phys State Key Lab Infrared Phys Shanghai 200083 Peoples R China;
Chinese Acad Sci Shanghai Inst Tech Phys State Key Lab Infrared Phys Shanghai 200083 Peoples R China;
Chinese Acad Sci Shanghai Inst Tech Phys State Key Lab Infrared Phys Shanghai 200083 Peoples R China;
Band-offset; dark current; HgCdTe; long-wavelength infrared (LWIR) photodetectors; nBn structure annealing;
机译:HGCDTE中华型红外电子雪崩光电探测器的增强性能与防护环设计
机译:超晶格屏障HgCdTe nBn红外光电探测器:有效质量近似的验证
机译:工程单极基于HgCdTe的nBn红外光电探测器的带隙
机译:SITP中超长波长HgCdTe红外光电探测器和HgCdTe APD暗电流表征的最新进展
机译:用于中长波长应用的高性能多色量子阱红外光电探测器和4 x 4三色焦平面阵列的研究。
机译:二硒Dis(ReSe2)近红外光电探测器:通过选择性p掺杂技术增强性能
机译:超晶格屏障HGCDTE NBN红外光电探测器:验证有效质量近似
机译:高性能多色量子阱红外光电探测器的研制及增强QWIp中光耦合和辐射效应的研究