Fully Printed Top-Gate Metal–Oxide Thin-Film Transistors Based on Scandium-Zirconium-Oxide Dielectric

摘要

The fully inkjet-printed top-gate metal–oxide thin-film transistors (TFTs) with excellent electrical performance are realized with the gate dielectric layer of scandium zirconium oxide (Sc₁Zr₁O_x). It is found that adding of nitrate-based scandium oxide (ScO_x) precursor into the chloride ligand-based zirconium oxide (ZrO_x) precursor will reduce the corrosivity of the mixed solution, and the incorporation of Zr ions into ScO_xwill suppress the hydrogen-ion migration and eliminate the acceptor-like traps in pure ScO_x. The fully printed indium gallium oxide (InGaO) TFTs based on Sc₁Zr₁O_xdielectric exhibited an average mobility of 10.8 cm$^{{2}} ext{V}^{phantom {R^{'}}-{1}} cdot ext{s}^{-{1}}$, a highest mobility of 12.9 cm$^{{2}} cdot ext{V}^{-{1}} cdot ext{s}^{-{1}}$, negligible hysteresis, and excellent stability under both the negative and positive bias stresses. In addition, a resistor-loaded inverter was fabricated using a fully printed InGaO TFT, which exhibited the full swing characteristics and a maximum gain of 5 at 2 V.