机译:HiSIM_GaN:GaN-HEMT的紧凑模型,具有精确的动态电流崩塌再现
Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Japan;
Toshiba Electronic Devices and Storage Corporation, Kawasaki, Japan;
Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Japan;
Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Japan;
Toshiba Electronic Devices and Storage Corporation, Kawasaki, Japan;
Toshiba Electronic Devices and Storage Corporation, Kawasaki, Japan;
Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Japan;
Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Japan;
Gallium nitride; Aluminum gallium nitride; Wide band gap semiconductors; Mathematical model; Semiconductor device modeling; Poisson equations; Electric potential;
机译:GaN-HEMT电源开关中电流崩塌的紧凑模型
机译:使用小型扬声器阵列精确再现目标信号以产生私人声音和沉默区域的策略比较
机译:紧凑型板式换热器的精确低阶动力学模型
机译:通过多目标进化优化的功能近似和动态建模精确,透明和紧凑的模糊模型
机译:精确的基于RTA的非准静态紧凑型MOSFET模型,用于RF和混合信号仿真。
机译:使用阻尼动力学针对中分辨率冷冻电磁图对原子模型进行精确灵活的细化
机译:GaN-HEMT动态导通态电阻表征和建模