Full functionality of LSI gate arrays fabricated on 3-in-diameter, MOCVD-grown GaAs-on-silicon substrates

摘要

Fully functional, 504-gate arrays have been fabricated on an MOCVD (metalorganic chemical-vapor deposition)-grown, 3-in-diameter, GaAs-on-silicon substrate. Each ECL (emitter-coupled-logic)-compatible gate array consists of an eight-bit adder, a D flip-flop, a 214 divider (with a divide-by-four tap), and a 263-stage inverter string. These circuits represent 90% gate utilization, or approximately 6600 transistors. The wafer-level yield of fully functional gate arrays is 10.7%. This demonstrates total functionality and yield for a digital circuit with LSI-level complexity using MOCVD-grown GaAs-on-silicon material and shows that this material, even with defect densities greater than 108 cm/sup -2/, is viable for high-density LSI circuits.