Numerical analysis for conduction mechanism of thin oxide-nitride-oxide films formed on rough poly-Si

摘要

The conduction mechanism of thin oxide-nitride-oxide films formed on rough poly-Si, in which grain sizes are not uniform, is studied for low and negative applied voltage. By assuming an electric field concentration at the convex edge of the plate electrode, the numerical analysis for direct tunneling (D.T.) is carried out. From the results, it is thought that the D.T. currents to the convex edge of the plate electrode dominate the total leakage currents.