Fabrication and characterization of Si-MOSFET's with PECVD amorphous Ta/sub 2/O/sub 5/ gate insulator

摘要

Silicon MOS transistors having amorphous Ta/sub 2/O/sub 5/ insulator gates have been fabricated. The Ta/sub 2/O/sub 5/ films were deposited using a low pressure (a few mtorr) plasma-enhanced CVD process in a microwave (2.45 GHz) excited electron cyclotron resonance reactor. The source gas was TaF/sub 5/. Electrical characteristics of p-channel Al gate transistors are presented.