Study on Time Constants of Random Telegraph Noise in Gate Leakage Current Through Hot-Carrier Stress Test

摘要

Capture and emission time constants obtained from random telegraph noise in gate leakage current ( $I_{g}$ RTN) are studied by characterizing an intentionally created trap in thin gate oxide (2.6 nm) in metal–oxide–semiconductor field-effect transistors (MOSFETs). The single oxide trap was generated at the drain edge region in virgin nMOSFETs by drain-avalanche hot-carrier stress. By analyzing the location and energy level of the trap extracted from the experimental data, the time constants of high and low current levels in $I_{g}$ RTN were found to be capture and emission times, respectively.