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Test method for predicting hot-carrier induced leakage over time in short- channel IGFETS and products designed in accordance with test results
Test method for predicting hot-carrier induced leakage over time in short- channel IGFETS and products designed in accordance with test results
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机译:预测短通道IGFET中随着时间推移热载流子引起的泄漏的测试方法以及根据测试结果设计的产品
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摘要
A test method and apparatus are provided for predicting hot- carrier induced leakage over time in IGFET's. Test results are used to show how choice of channel length and stress voltages critically affect hot- carrier-induced leakage (HCIL) leakage over time, particularly in devices having submicron channel lengths. Models are developed for predicting leakage current over the long term given short term test results. Alternative design strategies are proposed for reliably satisfying long term leakage requirements.
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