High-Responsivity Modulation-Doped AlGaAs/InGaAs Thermopiles for Uncooled IR-FPA Utilizing Integrated HEMT–MEMS Technology

摘要

Novel thermopiles based on modulation-doped AlGaAs/InGaAs heterostructures are proposed and developed for the first time for uncooled IR focal plane array (FPA) image sensor application. The high responsivity $R$ with the high-speed response time $tau$are designed to be 4900 V/W with 110 $muhbox{s}$. Based on integrated high-electron-mobility-transistor–microelectromechanical-system technology, the 32 $times$ 32 matrix FPAs are fabricated to demonstrate its enhanced performance by blackbody measurement. The technology presented here demonstrates the potential of this approach for low-cost uncooled IR FPA applications.