Triangular-Pulse Measurement for Hysteresis of High-Performance and Flexible Graphene Field-Effect Transistors

摘要

We use a triangular-pulse measurement technique to obtain the hysteretic electrical characteristics of flexible graphene field-effect transistors (GFETs). To minimize charge trapping, the gate-voltage scanning rate was controlled (up to 2 ${rm V}/mu{rm s}$) by varying the triangular-pulse rise and fall times. This method makes it possible to measure the intrinsic-like transfer characteristics of chemical vapor deposition graphene devices. The maximum electron (hole) mobility measured by a dc measurement is ${sim}{4800}$ (5200) ${rm cm}^{2}/{rm Vs}$, whereas the maximum electron (hole) mobility measured by the triangular-pulse technique with a gate-voltage scanning rate of 0.4 ${rm V}/mu{rm s}$ is $sim{10600}$ (8500) ${rm cm}^{2}/{rm Vs}$. For measurements with a triangular gate pulse, the shift of the Dirac voltage is less than that measured by the dc method. These results indicate that the triangular-gate-pulse measurement is a promising technique with which to determine the intrinsic properties and ambipolar transfer characteristics of GFETs.